Thursday, February 23, 2012

【ISSCC】ルネサスが試作した2ポートSRAM、出力アクセス時間360psを達成



【ISSCC】ルネサスが試作した2ポートSRAM、出力アクセス時間360psを達成
TECH-ON! -- 技術者を応援する情報サイト -- | FEBRUARY 23, 2012
http://pulse.me/s/6g2bB
ルネサス エレクトロニクスは、28nm世代以降のSoC向けに新しいSRAM回路技術を開発した。新技術は、3次元グラフィックス処理回路などに使われる2ポートSRAMの動作速度を飛躍的に向上させるアーキテクチャで、高速化と安定動作の両立が可能になるという。 Read more

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